STP3LN62K3
MOSFET N-CH 620V 2.5A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ N-Channel Power MOSFET, STP3LN62K3. This device features a 620 V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.5 A at 25°C (Tc). The Rds On is specified at a maximum of 3 Ohm at 1.25 A and 10 Vgs. Key parameters include a gate charge (Qg) of 17 nC (max) at 10 Vgs and input capacitance (Ciss) of 386 pF (max) at 50 Vds. With a maximum power dissipation of 45 W (Tc) and an operating junction temperature of 150°C, this component is housed in a TO-220 package, suitable for through-hole mounting. The STP3LN62K3 is utilized in power supply applications, lighting, and industrial motor control.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 386 pF @ 50 V |
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