STP3HNK90Z
MOSFET N-CH 800V 3A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP3HNK90Z is an N-Channel SuperMESH™ MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 3 A at 25°C (Tc), with a maximum power dissipation of 90 W (Tc). The Rds On is specified as a maximum of 4.2 Ohms at 1.5 A and 10 V. Key parameters include a gate charge (Qg) of 35 nC at 10 V and input capacitance (Ciss) of 690 pF at 25 V. The STP3HNK90Z utilizes a Metal Oxide technology and is housed in a TO-220-3 through-hole package. It operates within a temperature range of -55°C to 150°C (TJ). This component finds application in power supply, lighting, and industrial control systems.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
Request a Quote
Clients Also Buy
STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
