STP36N55M5
MOSFET N-CH 550V 33A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP36N55M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This component offers a 550 V breakdown voltage (Vdss) and a continuous drain current of 33 A at 25°C (Tc). With a maximum power dissipation of 190 W (Tc), it features a low on-resistance (Rds On) of 80 mOhm at 16.5 A and 10 V gate-source voltage. The device has a typical gate charge (Qg) of 62 nC at 10 V and input capacitance (Ciss) of 2670 pF at 100 V. Designed for through-hole mounting in a TO-220-3 package, it operates efficiently across a junction temperature range of -55°C to 150°C. This MOSFET is suitable for applications in high-voltage power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2670 pF @ 100 V |
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