STP360N4F6
MOSFET N-CH 40V 120A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP360N4F6 is a 40V N-Channel STripFET™ VI Power MOSFET designed for demanding applications. This device features a low Rds(on) of 1.8mOhm at 60A and 10V, coupled with a continuous drain current capability of 120A at 25°C. Its 300W power dissipation and robust TO-220 package make it suitable for automotive and industrial power conversion systems. The STP360N4F6 boasts a high gate charge of 340 nC at 10V, indicating effective switching characteristics. Qualified to AEC-Q101 standards, this MOSFET operates reliably across a wide temperature range of -55°C to 175°C.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17930 pF @ 25 V |
| Qualification | AEC-Q101 |
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