STP35NF10
MOSFET N-CH 100V 40A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP35NF10 is an N-Channel Power MOSFET from the STripFET™ II series. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 35mOhm maximum at 17.5A and 10V drive voltage. With a maximum power dissipation of 115W (Tc), it is housed in a standard TO-220-3 through-hole package, suitable for applications requiring robust power handling. Key parameters include a gate charge (Qg) of 55 nC maximum at 10V and input capacitance (Ciss) of 1550 pF maximum at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is utilized in various power management applications, including power supplies and motor control.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
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