STP35N65M5
MOSFET N-CH 650V 27A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP35N65M5 is a 650V N-Channel Power MOSFET from the MDmesh™ V series. This device features a continuous drain current capability of 27A (Tc) and a maximum power dissipation of 160W (Tc). With a low on-resistance of 98mOhm (Max) @ 13.5A, 10V, and a gate charge of 83 nC @ 10 V, it is optimized for efficient switching in high-voltage applications. The STP35N65M5 is housed in a TO-220-3 package, suitable for through-hole mounting. Key electrical parameters include a drain-to-source voltage of 650V and a maximum junction temperature of 150°C. This component is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 100 V |
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