STP32N65M5
MOSFET N-CH 650V 24A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP32N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 24 A at 25°C (Tc), with a maximum power dissipation of 150 W (Tc). The Rds On is specified at a maximum of 119 mOhm at 12 A and 10 V. Key parameters include a gate charge (Qg) of 72 nC at 10 V and an input capacitance (Ciss) of 3320 pF at 100 V. Designed for through-hole mounting in a TO-220-3 package, it operates at junction temperatures up to 150°C. This MOSFET is utilized in power supply, lighting, and industrial applications requiring high voltage and efficient switching.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 119mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 100 V |
Request a Quote
Clients Also Buy
STD18N55M5
MOSFET N-CH 550V 16A DPAK
STD18N65M5
MOSFET N-CH 650V 15A DPAK
STF45N65M5
MOSFET N-CH 650V 35A TO220FP
