STP318N4F6
MOSFET N-CH 40V 160A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP318N4F6 is an N-channel STripFET™ MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current capability of 160A at 25°C. The device exhibits a low on-resistance (Rds On) of 2.2mOhm at 80A and 10V drive voltage, indicating efficient power transfer. With a maximum power dissipation of 341W at 25°C, this MOSFET is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 240 nC at 10V and input capacitance (Ciss) of 13800000 pF at 25V. The operating temperature range is -55°C to 175°C. The STP318N4F6 is housed in a TO-220 package, facilitating through-hole mounting. This device finds application in sectors such as automotive and industrial power systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800000 pF @ 25 V |
| Qualification | - |
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