STP315N10F7
MOSFET N-CH 100V 180A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP315N10F7 is a high-performance N-Channel MOSFET from the DeepGATE™, STripFET™ VII series. This device offers a 100V drain-source breakdown voltage and a continuous drain current capability of 180A at 25°C (Tc), with a maximum power dissipation of 315W (Tc). Featuring a low on-resistance of 2.7mOhm at 60A and 10V gate-source voltage, it is optimized for efficient power switching. The STP315N10F7 is designed for demanding automotive applications, meeting AEC-Q101 qualification standards. Its TO-220 package with through-hole mounting facilitates integration into power systems. Key parameters include a gate charge of 180 nC at 10V, input capacitance (Ciss) of 12800 pF at 25V, and a threshold voltage (Vgs(th)) of 4.5V at 250µA. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12800 pF @ 25 V |
| Qualification | AEC-Q101 |
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