STP30NM60ND
MOSFET N-CH 600V 25A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP30NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This component features a continuous drain current of 25A (Tc) at 25°C and a maximum power dissipation of 190W (Tc). The Rds On is specified at 130mOhm maximum at 12.5A and 10V gate drive. Key parameters include a Vdss of 600V, gate charge (Qg) of 100 nC @ 10V, and input capacitance (Ciss) of 2800 pF @ 50V. It operates at junction temperatures up to 150°C and is housed in a TO-220-3 package for through-hole mounting. This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and high voltage switching.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 50 V |
Request a Quote
Clients Also Buy
STD11NM60ND
MOSFET N-CH 600V 10A DPAK
STB34NM60ND
MOSFET N-CH 600V 29A D2PAK
STF11NM60ND
MOSFET N-CH 600V 10A TO220FP
