STP30NM60N
MOSFET N-CH 600V 25A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP30NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 25A at 25°C. The maximum power dissipation is 190W (Tc). It offers a low on-resistance (Rds On) of 130mOhm at 12.5A and 10V drive voltage. Gate charge (Qg) is 91 nC maximum at 10V, with input capacitance (Ciss) at 2700 pF maximum @ 50V. The STP30NM60N is housed in a TO-220AB package for through-hole mounting. This device is suitable for applications in power supply, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V |
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