STP30NM50N
MOSFET N-CH 500V 27A TO220-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP30NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 27 A at 25°C, with a maximum power dissipation of 190 W (Tc). The STP30NM50N offers a low on-resistance (Rds On) of 115 mOhm at 13.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 94 nC at 10 V and input capacitance (Ciss) of 2740 pF at 50 V. Designed for through-hole mounting, it is supplied in a TO-220-3 package. This device is suitable for applications in power supply units and industrial automation.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2740 pF @ 50 V |
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