STP30NM30N
MOSFET N-CH 300V 30A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STP30NM30N is an N-Channel MOSFET from the MDmesh™ II series. This through-hole component, packaged in a TO-220AB, offers a drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 30A at 25°C. Featuring low on-resistance (Rds On) of 90mOhm at 15A and 10V, this device has a maximum power dissipation of 160W (Tc). Key parameters include a gate charge (Qg) of 75 nC @ 10V and input capacitance (Ciss) of 2500 pF @ 50V. Suitable for applications in power supply, motor control, and industrial automation, it operates within a temperature range of -65°C to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
