STP30N65DM6AG
DISCRETEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 28A (Tc) 223W (Tc) Through Hole TO-220
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 223W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | TO-220 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STP19NM50N
MOSFET N-CH 500V 14A TO220AB
STL285N4F7AG
MOSFET N-CH 40V 120A POWERFLAT
