STP30N10F7
MOSFET N-CH 100V 32A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP30N10F7 is a 100V N-Channel STripFET™ power MOSFET designed for efficient power switching applications. This device features a low Rds(on) of 24mOhm at 16A and 10V, facilitating reduced conduction losses. With a continuous drain current capability of 32A (Tc) and a maximum power dissipation of 50W (Tc), it is suitable for demanding environments. The STP30N10F7 utilizes through-hole mounting in a standard TO-220AB package, ensuring compatibility with established assembly processes. Key parameters include a gate charge (Qg) of 19 nC @ 10 V and input capacitance (Ciss) of 1270 pF @ 50 V. This MOSFET is commonly employed in power supplies, motor control, and automotive applications. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 50 V |
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