STP2NK60Z
MOSFET N-CH 600V 1.4A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP2NK60Z is an N-Channel Power MOSFET from the SuperMESH™ series. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 1.4A at 25°C (Tc), with a maximum power dissipation of 45W (Tc). The ON-resistance (Rds On) is a maximum of 8 Ohms at 700mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 10 nC (max) at 10V and input capacitance (Ciss) of 170 pF (max) at 25V. The device is provided in a TO-220AB package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in power supply, lighting, and industrial applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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