STP27N60M2-EP
MOSFET N-CH 600V 20A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP27N60M2-EP is an N-Channel Power MOSFET from the MDmesh™ M2-EP series. This device offers a 600V drain-to-source breakdown voltage and a continuous drain current of 20A (Tc) at 25°C. The MOSFET features a maximum on-resistance of 163mOhm at 10A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 33 nC (max) at 10V and input capacitance (Ciss) of 1320 pF (max) at 100V. With a maximum power dissipation of 170W (Tc), this component is suitable for through-hole mounting in a TO-220-3 package. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power supply and industrial applications.
Additional Information
Series: MDmesh™ M2-EPRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 163mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 100 V |
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