STP27N3LH5
MOSFET N-CH 30V 27A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP27N3LH5 is a 30V N-Channel STripFET™ V power MOSFET in a TO-220AB package. This device offers a continuous drain current capability of 27A at 25°C (Tc) and a maximum power dissipation of 45W (Tc). The low on-resistance is specified at 20mOhm maximum at 13.5A, 10V, with a gate-source drive voltage range of 4.5V to 10V. Key electrical parameters include a gate charge (Qg) of 4.6 nC maximum at 5V and input capacitance (Ciss) of 475 pF maximum at 25V. The STP27N3LH5 is suitable for applications requiring efficient power switching and is manufactured using advanced MOSFET technology. This component is operational across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±22V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 25 V |
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