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STP270N8F7W

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STP270N8F7W

MOSFET N CH 80V 180A TO-220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP270N8F7W is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 180A at 25°C. The device exhibits a low on-resistance (Rds On) of 2.5mOhm at 90A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 315W at the case temperature. Key parameters include a gate charge (Qg) of 193 nC at 10V and an input capacitance (Ciss) of 13600 pF at 50V Vds. The STP270N8F7W is housed in a TO-220-3 package for through-hole mounting and operates within a temperature range of -55°C to 175°C. This MOSFET is suitable for power supply, automotive, and industrial motor control applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 90A, 10V
FET Feature-
Power Dissipation (Max)315W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13600 pF @ 50 V

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