STP26NM60ND
MOSFET N-CH 600V 21A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP26NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This device features a continuous drain current of 21A (Tc) and a maximum power dissipation of 190W (Tc). Key parameters include a Vgs(th) of 5V @ 250µA, a low Rds(on) of 175mOhm @ 10.5A, 10V, and a gate charge of 54.6 nC @ 10V. The input capacitance (Ciss) is rated at 1817 pF @ 100V. Designed for through-hole mounting in a TO-220-3 package, this MOSFET operates at junction temperatures up to 150°C and supports a maximum gate-source voltage of ±25V. It finds application in power factor correction, switched-mode power supplies, and industrial motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1817 pF @ 100 V |
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