STP265N6F6AG
MOSFET N-CH 60V 180A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP265N6F6AG is an N-Channel STripFET™ F6 series MOSFET designed for demanding applications. This device offers a 60 V drain-source voltage rating and a continuous drain current capability of 180 A at 25°C (Tc). With a low on-resistance of 2.85 mOhm at 60 A and 10 V gate-source voltage, it minimizes conduction losses. The STP265N6F6AG features a maximum power dissipation of 300 W (Tc) and a high junction temperature rating of 175°C. Its typical applications include automotive power management, electric vehicle systems, and industrial power supplies. The component is provided in a TO-220-3 package, suitable for through-hole mounting, and meets AEC-Q101 qualification standards.
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.85mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11800 pF @ 25 V |
| Qualification | AEC-Q101 |
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