STP260N6F6
MOSFET N-CH 60V 120A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP260N6F6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The device offers a low on-resistance of 3mOhm at 60A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 183 nC (max) at 10V Vgs and an input capacitance (Ciss) of 11400 pF (max) at 25V Vds. The STP260N6F6 is housed in a TO-220-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in industrial and automotive applications requiring high-power switching.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11400 pF @ 25 V |