STP25NM50N
MOSFET N-CH 500V 22A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP25NM50N is an N-Channel Power MOSFET from the MDmesh™ series. This device offers a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 22 A at 25°C (Tc). With a maximum power dissipation of 160 W (Tc), it features a low on-resistance of 140 mOhm at 11 A and 10 V. The STP25NM50N has a gate charge (Qg) of 84 nC at 10 V and input capacitance (Ciss) of 2565 pF. Designed for through-hole mounting in a TO-220 package, this MOSFET is suitable for applications in power supplies, inverters, and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 25 V |
Request a Quote
Clients Also Buy
STB43N65M5
MOSFET N-CH 650V 42A D2PAK
STP12NM50FP
MOSFET N-CH 500V 12A TO220FP
STP12NM50
MOSFET N-CH 500V 12A TO220AB
