STP25N10F7
MOSFET N-CH 100V 25A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP25N10F7 is an N-Channel Power MOSFET from the STripFET™ VII series, featuring DeepGATE™ technology. This component offers a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C (Tc). With a maximum power dissipation of 50W (Tc) and a low on-resistance (Rds On) of 35mOhm at 12.5A and 10V gate drive, it ensures efficient power handling. Key parameters include input capacitance (Ciss) of 920pF at 50V and gate charge (Qg) of 14nC at 10V. The device operates across a wide temperature range from -55°C to 175°C (TJ) and is housed in a standard TO-220-3 through-hole package. Applications include power supplies, motor control, and lighting systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 50 V |
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