STP24N65M2
MOSFET N-CH 650V 16A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP24N65M2 is an N-Channel Power MOSFET from the MDmesh™ M2 series. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain current (Id) capability of 16 A at 25°C (Tc), with a maximum power dissipation of 150 W (Tc). The device exhibits a low on-resistance (Rds On) of 230 mOhm at 8 A and 10 V (Vgs). Key parameters include a gate charge (Qg) of 29 nC (Max) at 10 V and input capacitance (Ciss) of 1060 pF (Max) at 100 V (Vds). Designed for through-hole mounting in a TO-220 package, it operates across a temperature range of -55°C to 150°C (TJ). The STP24N65M2 is suitable for applications in power factor correction, switched-mode power supplies, and general-purpose high-voltage switching.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V |
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