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STP240N10F7

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STP240N10F7

MOSFET N-CH 100V 180A TO220

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP240N10F7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This through-hole component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain current (Id) of 180 A at 25°C (Tc). The device offers a low on-resistance of 3.2 mOhm maximum at 60 A and 10 V gate drive. With a maximum power dissipation of 300 W (Tc), it is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 176 nC at 10 V and input capacitance (Ciss) of 12600 pF at 25 V. The TO-220-3 package is designed for efficient thermal management, and the component operates across a temperature range of -55°C to 175°C (TJ). Typical applications include power switching and motor control systems within industrial and automotive sectors.

Additional Information

Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12600 pF @ 25 V

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