STP23NM60ND
MOSFET N-CH 600V 19.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP23NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series, featuring a 600V breakdown voltage and a continuous drain current capability of 19.5A at 25°C (Tc). This device offers a low on-resistance of 180mOhm maximum at 10A and 10V Vgs. Designed for high-efficiency switching applications, it boasts a maximum power dissipation of 150W (Tc) and an operating junction temperature up to 150°C. Key parameters include a gate charge of 69 nC (Max) at 10V Vgs and input capacitance of 2100 pF (Max) at 50V Vds. The STP23NM60ND is housed in a standard TO-220-3 package for through-hole mounting. Its robust performance makes it suitable for demanding applications in power supplies, motor control, and industrial automation.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V |
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