STP23NM60N
MOSFET N-CH 600V 19A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP23NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 19A at 25°C (Tc). It offers a maximum on-resistance (Rds On) of 180 mOhm at 9.5A and 10V gate-source voltage (Vgs). The device has a high maximum junction temperature of 150°C (TJ) and a power dissipation of 150W (Tc). Key parameters include a gate charge (Qg) of 60 nC at 10 V and input capacitance (Ciss) of 2050 pF at 50 V. The STP23NM60N is housed in a TO-220-3 package with through-hole mounting. This MOSFET is utilized in applications such as power supplies, industrial motor control, and lighting.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |
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