STP22NS25Z
MOSFET N-CH 250V 22A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STP22NS25Z is an N-Channel Power MOSFET from the MESH OVERLAY™ series, available in a TO-220AB package. This component features a drain-source voltage (Vdss) of 250V and offers a continuous drain current (Id) of 22A at 25°C with a maximum power dissipation of 135W (Tc). The Rds(on) is specified at a maximum of 150mOhm when driven at 11A and 10V. Key parameters include a gate charge (Qg) of 151 nC @ 10V and input capacitance (Ciss) of 2400 pF @ 25V. Operating temperature ranges from -55°C to 150°C. This device is suitable for applications in industrial and power supply sectors.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
Request a Quote
Clients Also Buy
STB19NF20
MOSFET N-CH 200V 15A D2PAK
STB16NS25T4
MOSFET N-CH 250V 16A D2PAK
STD5N20T4
MOSFET N-CH 200V 5A DPAK
