STP21NM60ND
MOSFET N-CH 600V 17A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP21NM60ND from the FDmesh™ II series is a 600V N-Channel Power MOSFET. This through-hole component features a continuous drain current of 17A (Tc) at 25°C and a maximum power dissipation of 140W (Tc). The Rds On is specified at 220mOhm maximum at 8.5A and 10V gate drive. Key parameters include a Vdss of 600V, a Vgs(th) of 5V at 250µA, and a gate charge (Qg) of 60nC at 10V. It is housed in a TO-220 package. This component is suitable for applications in power supplies and motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
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