STP21NM50N
MOSFET N-CH 500V 18A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP21NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This through-hole component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C (Tc). It offers a low on-resistance (Rds On) of 190mOhm maximum at 9A and 10V gate drive. The STP21NM50N has a maximum power dissipation of 140W (Tc) and an operating temperature of 150°C (TJ). Key parameters include a typical gate charge (Qg) of 65 nC at 10V and an input capacitance (Ciss) of 1950 pF at 25V. This device is suitable for applications in industrial and power supply sectors. The component is supplied in a TO-220 package.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
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