STP210N75F6
MOSFET N-CH 75V 120A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP210N75F6 is a STripFET™ VI N-Channel Power MOSFET with a 75V drain-source voltage rating. This device, packaged in a TO-220, offers a continuous drain current of 120A (Tc) and a maximum power dissipation of 300W (Tc). The STP210N75F6 features a low on-resistance of 3.7mOhm at 60A and 10V gate-source voltage. Key parameters include a gate charge of 171 nC @ 10 V and an input capacitance of 11800 pF @ 25 V. Its robust design and high current handling capabilities make it suitable for applications in power supplies, motor control, and automotive systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 171 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11800 pF @ 25 V |
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