STP20NM65N
MOSFET N-CH 650V 15A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP20NM65N is a 650V N-Channel Power MOSFET from the MDmesh™ II series. This component features a continuous drain current of 15A at 25°C (Tc) and a maximum power dissipation of 125W (Tc). With a drain-to-source voltage (Vdss) of 650V, it is suitable for high-voltage applications. The device offers a low on-resistance (Rds On) of 270mOhm maximum at 7.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 44 nC maximum at 10V and input capacitance (Ciss) of 1280 pF maximum at 50V. The STP20NM65N is packaged in a TO-220-3 through-hole configuration and operates at junction temperatures up to 150°C. Its robust design makes it suitable for use in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 50 V |