STP20NM60A
MOSFET N-CH 650V 20A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP20NM60A, an N-Channel Power MOSFET from the MDmesh™ series, offers a 650V drain-source voltage and a continuous drain current of 20A at 25°C (Tc). This through-hole component, packaged in a TO-220AB, features a maximum power dissipation of 192W (Tc) and a low on-resistance of 290mOhm at 10A and 10V. The STP20NM60A exhibits a typical gate charge of 60 nC at 10V and an input capacitance of 1630 pF at 25V. This device is suitable for high-voltage switching applications across various industries, including power supplies, motor control, and lighting. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
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