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STP20NM60A

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STP20NM60A

MOSFET N-CH 650V 20A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP20NM60A, an N-Channel Power MOSFET from the MDmesh™ series, offers a 650V drain-source voltage and a continuous drain current of 20A at 25°C (Tc). This through-hole component, packaged in a TO-220AB, features a maximum power dissipation of 192W (Tc) and a low on-resistance of 290mOhm at 10A and 10V. The STP20NM60A exhibits a typical gate charge of 60 nC at 10V and an input capacitance of 1630 pF at 25V. This device is suitable for high-voltage switching applications across various industries, including power supplies, motor control, and lighting. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs290mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)192W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1630 pF @ 25 V

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