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STP20NM50FP

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STP20NM50FP

MOSFET N-CH 550V 20A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP20NM50FP is an N-Channel Power MOSFET from the MDmesh™ series, featuring a 550V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. This through-hole component, housed in a TO-220FP package, offers a maximum power dissipation of 45W (Tc) and a low on-resistance (Rds On) of 250mOhm at 10A, 10V. The gate charge (Qg) is specified at 56 nC maximum at 10V, with an input capacitance (Ciss) of 1480 pF maximum at 25V. Optimized for high-efficiency switching applications, this device is commonly utilized in power supplies, lighting, and industrial motor control systems. It operates within a temperature range of -65°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.

Additional Information

Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs250mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)45W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)550 V
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 25 V

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