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STP20NF06L

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STP20NF06L

MOSFET N-CH 60V 20A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STP20NF06L is a 60V N-Channel Power MOSFET from the STripFET™ II series. This through-hole component, packaged in a TO-220AB, offers a continuous drain current of 20A at 25°C (Tc) and a maximum power dissipation of 60W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 60V, a maximum on-resistance (Rds On) of 70mOhm at 10A and 10V, and a gate charge (Qg) of 7.5 nC at 10V. Input capacitance (Ciss) is rated at 400 pF. This device is suitable for applications in automotive, industrial, and consumer electronics power switching. It operates within a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±18V, with a threshold voltage (Vgs(th)) of 4V at 250µA.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs70mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±18V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 25 V

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