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STP20NF06

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STP20NF06

MOSFET N-CH 60V 20A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

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STMicroelectronics STP20NF06 is an N-channel STripFET™ II Power MOSFET designed for high-efficiency switching applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc). The STP20NF06 offers a low on-resistance (Rds On) of 70mOhm maximum at 10A, 10V, facilitated by its Metal Oxide technology. With a gate charge (Qg) of 18 nC maximum at 10V and input capacitance (Ciss) of 400 pF maximum at 25V, it ensures efficient switching performance. The device is packaged in a TO-220AB through-hole configuration, allowing for effective thermal management with a maximum power dissipation of 60W (Tc). Typical applications include power supplies, motor control, and automotive systems. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs70mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 25 V

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