STP20NE06L
MOSFET N-CH 60V 20A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP20NE06L is an N-Channel STripFET™ power MOSFET designed for high-efficiency switching applications. This device features a 60V drain-source voltage (Vds) and a continuous drain current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 70W (Tc). The STP20NE06L offers a low on-resistance (Rds On) of 70mOhm at 10A, 10V, and a gate charge (Qg) of 20 nC at 5V, enabling faster switching speeds. Its input capacitance (Ciss) is 800 pF at 25V. The MOSFET operates at junction temperatures up to 175°C and is available in a through-hole TO-220-3 package. This component is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: STripFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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