STP20N20
MOSFET N-CH 200V 18A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP20N20 is an N-Channel, STripFET™ II series power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 18A at 25°C (Tc), with a maximum power dissipation of 90W (Tc). The Rds On is specified at a maximum of 125mOhm at 10A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 39 nC (Max) at 10V and an Input Capacitance (Ciss) of 940 pF (Max) at 25V. The STP20N20 utilizes advanced MOSFET technology and is housed in a standard TO-220-3 through-hole package. This device is commonly employed in industrial power supplies, automotive electronics, and renewable energy systems. It supports a gate drive voltage range up to ±20V.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 25 V |
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