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STP200NF04

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STP200NF04

MOSFET N-CH 40V 120A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

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STMicroelectronics STP200NF04 is an N-channel Power MOSFET from the STripFET™ II series. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain current (Id) of 120A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 3.7mOhm maximum at 90A and 10V drive voltage, with a maximum power dissipation of 310W (Tc). Key parameters include a gate charge (Qg) of 210 nC maximum at 10V and input capacitance (Ciss) of 5100 pF maximum at 25V. The STP200NF04 is housed in a TO-220-3 package, suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in applications such as power switching, motor control, and automotive systems.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3.7mOhm @ 90A, 10V
FET Feature-
Power Dissipation (Max)310W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5100 pF @ 25 V

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