STP200NF03
MOSFET N-CH 30V 120A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP200NF03 is an N-Channel STripFET™ III Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 120A at 25°C (Tc), with a maximum Power Dissipation of 300W (Tc). The low on-resistance of 3.6mOhm is achieved at 60A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 140 nC at 10V and an Input Capacitance (Ciss) of 4950 pF at 25V. The STP200NF03 is housed in a TO-220AB through-hole package, suitable for demanding thermal management. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in automotive, industrial power control, and consumer electronics sectors.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4950 pF @ 25 V |
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