STP200N6F3
MOSFET N-CH 60V 120A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP200N6F3 is a high-performance N-Channel STripFET™ MOSFET designed for demanding power applications. This component offers a 60 V drain-source voltage rating and a continuous drain current capability of 120 A at 25°C (Tc), with a maximum power dissipation of 330 W (Tc). The low on-resistance of 3.9 mOhm at 60 A and 10 V gate drive voltage minimizes conduction losses. Featuring a low gate charge of 100 nC at 10 V and an input capacitance of 6800 pF at 25 V, this MOSFET ensures efficient switching characteristics. The STP200N6F3 is housed in a standard TO-220AB package for through-hole mounting, facilitating integration into various power systems. It operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly utilized in automotive, industrial power supplies, and high-power switching applications.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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