STP200N3LL
MOSFET N-CH 30V 120A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP200N3LL is an N-Channel Power MOSFET designed for high-current applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). The low on-resistance is rated at a maximum of 2.4mOhm at 60A and 10V gate drive. With a maximum power dissipation of 176.5W (Tc), it is suitable for demanding power management tasks. Key characteristics include a gate charge of 53nC (max) at 4.5V and an input capacitance (Ciss) of 5200pF (max) at 25V. The STP200N3LL utilizes through-hole mounting in a standard TO-220-3 package and operates across a wide temperature range of -55°C to 175°C (TJ). This component finds application in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
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