STP1N105K3
MOSFET N-CH 1050V 1.4A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP1N105K3 SuperMESH3™ N-Channel Power MOSFET, featuring a 1050V Drain-Source Voltage (Vdss) and 1.4A continuous drain current at 25°C (Tc). This TO-220 packaged device offers a maximum Rds(on) of 11 Ohm at 600mA and 10V gate drive. Key parameters include 180pF input capacitance (Ciss) and 13nC gate charge (Qg). With a maximum power dissipation of 60W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power factor correction, lighting, and switch mode power supplies. The device is available in tube packaging.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1050 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 100 V |
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