STP19NM65N
MOSFET N-CH 650V 15.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP19NM65N is an N-Channel Power MOSFET from the MDmesh™ II series, available in a TO-220AB package. This device features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 15.5A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The Rds On is specified at a maximum of 270mOhm at 7.75A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 55 nC (Max) at 10V and input capacitance (Ciss) of 1900 pF (Max) at 50V. The operating junction temperature reaches up to 150°C. This component is suitable for high-voltage applications in power factor correction (PFC) and switch-mode power supplies (SMPS).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 7.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V |
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