STP19NB20
MOSFET N-CH 200V 19A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP19NB20 is a N-Channel Power MOSFET from the PowerMESH™ series. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 19A at 25°C. The device offers a low on-resistance (Rds On) of 180mOhm maximum at 9.5A and 10V gate-to-source voltage. Key parameters include a gate charge (Qg) of 40 nC maximum at 10V and an input capacitance (Ciss) of 1000 pF maximum at 25V. The STP19NB20 has a maximum power dissipation of 125W at 25°C and a maximum junction temperature of 150°C. It is housed in a standard TO-220-3 package and utilizes through-hole mounting. This MOSFET is suitable for applications in power switching and motor control.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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