STP18NM60ND
MOSFET N-CH 600V 13A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP18NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series, designed for high-voltage applications. This component features a Vds rating of 600 V and a continuous drain current of 13 A at 25°C (Tc). The Rds(on) is specified at a maximum of 290 mOhm at 6.5 A and 10 V, with a gate-source voltage range of ±25 V. Key parameters include a 34 nC gate charge (Qg) at 10 V and an input capacitance (Ciss) of 1030 pF at 50 V. The device offers a maximum power dissipation of 110 W (Tc) and an operating junction temperature of 150°C. Packaged in a TO-220-3 through-hole configuration, this MOSFET is suitable for power supply, lighting, and industrial applications.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 50 V |
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