STP18N60M6
MOSFET N-CH 600V 13A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP18N60M6 is an N-Channel Power MOSFET from the MDmesh™ M6 series. This component offers a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 13A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). Key parameters include a maximum Rds (On) of 280mOhm at 6.5A and 10V, and a typical gate charge (Qg) of 16.8 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 650 pF at 100V. The device is housed in a TO-220-3 package, suitable for through-hole mounting, and operates over a temperature range of -55°C to 150°C (TJ). This robust Power MOSFET is utilized in various industrial applications, including power supplies and motor control systems.
Additional Information
Series: MDmesh™ M6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 100 V |