STP180NS04ZC
MOSFET N-CH 33V 120A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SAFeFET™ STP180NS04ZC is an N-channel Power MOSFET designed for high-current applications. This device features a 33 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 120 A at 25°C (Tc), with a maximum power dissipation of 330 W (Tc). The low on-resistance (Rds On) of 4.2 mOhm at 40 A and 10 V gate-source voltage (Vgs) ensures efficient power transfer. Key parameters include a gate charge (Qg) of 110 nC at 10 V and input capacitance (Ciss) of 4560 pF at 25 V. Operating across a temperature range of -55°C to 175°C (TJ), this component is housed in a TO-220-3 package suitable for through-hole mounting. The STP180NS04ZC finds application in various power management systems, including automotive and industrial power conversion.
Additional Information
Series: SAFeFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 33 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 25 V |
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