STP180N55F3
MOSFET N-CH 55V 120A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP180N55F3 is an N-Channel Power MOSFET from the STripFET™ series. This device features a drain-source breakdown voltage (Vdss) of 55V and a continuous drain current (Id) capability of 120A at 25°C. The low on-resistance (Rds On) of 3.8mOhm is achieved at a drain current of 60A and a gate-source voltage (Vgs) of 10V. With a maximum power dissipation of 330W (Tc), this MOSFET is designed for high-power applications. Key electrical parameters include a gate charge (Qg) of 100 nC @ 10V and input capacitance (Ciss) of 6800 pF @ 25V. The STP180N55F3 utilizes a TO-220AB package, suitable for through-hole mounting, and operates within an extended temperature range of -55°C to 175°C (TJ). This component is commonly utilized in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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